DMG6601LVT-7 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

DMG6601LVT-7

Description:

MOSFET N/P-CH 30V 26TSOT

Stock:

15356

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.08

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Parameters

Current at 25 ° C - continuous drain (Id)

3.8A,2.5A

Drain source voltage (Vdss)

30V

FET Type

N and P Channel

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

12.3nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

422pF @ 15V

On resistance (maximum) for different Ids and Vgs

55 mΩ @ 3.4A,10V

Power - maximum

850mW

Vgs (th) (maximum) for different Ids

1.5V @ 250µA

packing

TR,CT

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-23-6 ,TSOT-23-6

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

DMG6601LVT-7（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15356,Price reference "real-time change" China/Hongkong。 DMG6601LVT-7 package/specs, Download DMG6601LVT-7、Datasheet。